Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

a Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan b Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan c Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA d Department of Electrophysics, National Chiao Tung University, 1...

Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures.

We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement f...

Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels

Approach for dislocation free GaN epitaxy

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contr...

Dislocation density reduction in GaN using porous SiN interlayers

The influence of a thin porous SiNX interlayer on the growth of GaN by metalorganic chemical vapor deposition (MOCVD) has been studied. The interlayer is deposited on a GaN template by introducing silane in the presence of ammonia into the MOCVD chamber, and a GaN overlayer is deposited on the interlayer. The SiNX interlayer produces inhomogeneous nucleation and lateral growth of the overlayer,...